| PART |
Description |
Maker |
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| SST4117A SST4118A |
1-Mb (128K x 8) Static RAM
1-Mbit (64K x 16) Static RAM 晶体管|场效应| N沟道| 80uA电流我（直）| SOT - 23封装
|
Electronic Theatre Controls, Inc.
|
| IS61LV6424 IS61LV6424-10TQ IS61LV6424-9TQ IS61LV64 |
64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
ASYNCHRONOUS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| UPD424800G5-10-7JD UPD424800G5-10-7KD UPD424800V-8 |
256K (32K x 8) Static RAM
8K x 8 Static RAM
RoboClock® High-speed Multi-phase PLL Clock Buffer
x8 Fast Page Mode DRAM x8快速页面模式的DRAM
|
NEC TOKIN, Corp.
|
| KM68257C-12 KM68257CJ-12 KM68257CJ-20 KM68257CL-12 |
32Kx8 bit high speed static RAM (5V operating), 20ns
32Kx8 bit high speed static RAM (5V operating), 15ns
32Kx8 bit high speed static RAM (5V operating), 12ns
32Kx8 Bit High Speed Static RAM(5V Operating(, Evolutionary Pin out. Operated at Commercial Temperature Range. 32Kx8位高速静态RAM5V的工作（，进化引脚了。在商业温度范围工作
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
|
| HCF4014 4898 HCF4014M013TR HCF4014BEY HCF4014BM1 |
8-STAGE STATIC SHIFT REGISTERS
SYNCHRONOUS PARALLEL OR SERIAL IN/SERIAL OUT 8 - STAGE STATIC SHIFT REGISTER
From old datasheet system
8-STAGE STATIC SHIFT REGISTERS
|
ST Microelectronics
STMicroelectronics
|
| TC55257DFI-70L TC55257DFI-85L TC55257DFTI-70L TC55 |
32,768 WORD x 8 BIT STATIC RAM 32,768字8位静态RAM
32K Word x 8 Static RAM(32Kx 8 静RAM) 32K的字× 8静态RAM2K的字× 8静态RAM）的
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| IC62VV1008LL IC62VV1008L IC62VV1008L-100B IC62VV10 |
70ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
100ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| IS62LV2568LL IS62LV2568L 25_62LV2568L-LL IS62LV256 |
256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM
From old datasheet system
ASYNCHRONOUS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| IS61LV12824 21_61LV12824 IS61LV12824-9B |
9ns; 3.3V; 128K x 24 high-speed CMOS CMOS static RAM
From old datasheet system
ASYNCHRONOUS STATIC RAM
|
ICSI
|
| IDT6168LA15PI IDT6168LA IDT6168SA 6168LA_DS_9916 I |
5.0V, 4k X 4, CMOS, Asynchronous, Static RAM
From old datasheet system
CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 35 ns, PDIP20
CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 35 ns, PDSO20
CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 25 ns, CQCC20
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
